Títol:
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Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
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Autor/a:
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Farjas Silva, Jordi; Rath, Chandana; Pinyol i Agelet, Albert; Roura Grabulosa, Pere; Bertrán Serra, Enric
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Abstract:
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A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions |
Data de publicació:
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15-02-2011 |
Matèries:
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-Materials nanoestructurals -Nanopartícules -Nitrurs -Semiconductors -Silici -- Compostos -Silici -- Oxidació -Nanoparticles -Nanostructure materials -Nitrides -Silicon -- Oxidation -Silicon compounds |
Drets:
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Tots els drets reservats |
Tipus de document:
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Article |
Publicat per:
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American Institute of Physics
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