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Título:	Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach
Autor/a:	Gomila Lluch, Gabriel; Bulashenko, Oleg; Rubí Capaceti, José Miguel; Kochelap, V. A.(Viacheslav Aleksandrovich)
Otros autores:	Universitat de Barcelona
Abstract:	We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration
Materia(s):	-Semiconductors -Soroll electrònic -Díodes -Transistors -Camps elèctrics -Microelectrònica -Semiconductors -Electronic noise -Diodes -Transistors -Electric fields -Microelectronics
Derechos:	(c) American Institute of Physics, 1998
Tipo de documento:	Artículo Artículo - Versión publicada
Editor:	American Institute of Physics
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