Porous alumina masks are fabricated by anodization of aluminum films grown on both semiconducting and insulating substrates. For these self-assembled alumina masks, pore diameters and periodicities within the ranges of 10–130 and 20–200nm, respectively, can be controlled by varying anodization conditions. 20nm periodicities correspond to pore densities in excess of 1012 per square inch, close to the holy grail of media with 1Tbit∕in.2 density. With these alumina masks, ordered sub-100-nm planar ferromagnetic nanodot arrays covering over 1cm2 were fabricated by electron beam evaporation and subsequent mask lift-off. Moreover, exchange-biased bilayer nanodots were fabricated using argon-ion milling. The average dot diameter and periodicity are tuned between 25 and 130nm and between 45 and 200nm, respectively. Quantitative analyses of scanning electron microscopy (SEM) images of pore and dot arrays show a high degree of hexagonal ordering and narrow size distributions. The dot periodicity obtained from grazi...