Título:
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Nanometer-scale oxidation of Si(100) surfaces by tapping mode atomic force microscopy
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Autor/a:
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Pérez Murano, Francesc; Abadal, G.; Barniol i Beumala, Núria; Aymerich Humet, Xavier; Servat, J.; Gorostiza Langa, Pablo Ignacio; Sanz Carrasco, Fausto
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Otros autores:
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Universitat de Barcelona |
Abstract:
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The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance. |
Materia(s):
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-Microscòpia de força atòmica -Silici -Nanoelectrònica -Detectors -Camps elèctrics -Atomic force microscopy -Silicon -Nanoelectronics -Detectors -Electric fields |
Derechos:
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(c) American Institute of Physics, 1995
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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