Título:
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Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy
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Autor/a:
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Porti i Pujal, Marc; Avidano, M.; Nafría i Maqueda, Montserrat; Aymerich Humet, Xavier; Carreras, Josep; Garrido Fernández, Blas
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Otros autores:
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Universitat de Barcelona |
Abstract:
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In this work, we demonstrate that conductive atomic force microscopy (C-AFM) is a very powerful tool to investigate, at the nanoscale, metal-oxide-semiconductor structures with silicon nanocrystals (Si-nc) embedded in the gate oxide as memory devices. The high lateral resolution of this technique allows us to study extremely small areas ( ~ 300nm2) and, therefore, the electrical properties of a reduced number of Si-nc. C-AFM experiments have demonstrated that Si-nc enhance the gate oxide electrical conduction due to trap-assisted tunneling. On the other hand, Si-nc can act as trapping centers. The amount of charge stored in Si-nc has been estimated through the change induced in the barrier height measured from the I-V characteristics. The results show that only ~ 20% of the Si-nc are charged, demonstrating that the electrical behavior at the nanoscale is consistent with the macroscopic characterization. |
Materia(s):
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-Propietats magnètiques -Microelectrònic -Estructura electrònica -Superfícies (Física) -Interfícies (Ciències físiques) -Pel·lícules fines -Magnetic properties -Microelectronics -Electronic structure -Surfaces (Physics) -Interfaces (Physical sciences) -Thin films |
Derechos:
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(c) American Institute of Physics, 2005
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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