Título:
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Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy
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Autor/a:
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Roura Grabulosa, Pere; López de Miguel, Manuel; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
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Otros autores:
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Universitat de Barcelona |
Abstract:
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A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics. |
Materia(s):
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-Microscòpia electrònica -Pel·lícules fines -Electron microscopy -Thin films |
Derechos:
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(c) American Institute of Physics, 1997
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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