Título:
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Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
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Autor/a:
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Diéguez Barrientos, Àngel; Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon; Alsina, F.; Pascual Gainza, Jordi
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Otros autores:
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Universitat de Barcelona |
Abstract:
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We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal‐organic vapor‐phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt‐type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle. |
Materia(s):
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-Superfícies (Física) -Interfícies (Ciències físiques) -Pel·lícules fines -Surfaces (Physics) -Interfaces (Physical sciences) -Thin films |
Derechos:
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(c) American Institute of Physics, 1996
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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