Title:
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A comparative variability analysis for CMOS and CNFET 6T SRAM cells
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Author:
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García Almudéver, Carmen; Rubio Sola, Jose Antonio
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats -CMOS -MOSFET -CNFET -SRAM chips -Carbon nanotubes -Nanotubs de carboni |
Rights:
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Document type:
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Article - Published version Conference Object |
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