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Title:	Manufacturing variability analysis in carbon nanotube technology: a comparison with bulk CMOS in 6T SRAM scenario
Author:	García Almudéver, Carmen; Rubio Sola, Jose Antonio
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	In silicon bulk CMOS technology the variability of the device parameters is a key drawback that may be a limiting factor for further miniaturizing nodes. New nanoscale beyond-CMOS devices are being studied such as carbon nanotubes (CNTs). The goal of this paper is to evaluate the parameter variability in Carbon Nanotube Field Effect Transistors (CNFETs) and its potential capability to be a promising alternative to Si-CMOS technology. The impact of the carbon nanotube diameter variations as well as the presence of metallic carbon nanotubes in the transistor are analyzed (device level). This variability model is used to make a comparison between Si-MOSFET and CNFET Static Random Access Memory (SRAM) 6T cells (circuit level).
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Nanotubes -Nanotubs -Nanotubs de carboni
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Document type:	Article - Published version Conference Object
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