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Electrothermally actuated RF MEMS switches suspended on a low-resistivity substrate
Girbau Sala, David; Pradell i Cara, Lluís; Lázaro Guillén, Antoni; Nebot Serra, Àlvar
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
This paper presents an electrothermally actuated lateral resistive-contact switch for application to low-gigahertz-band communication systems. It was manufactured on a standard low-resistivity substrate, and its RF performance was improved by suspending the structures 25 μm from the substrate, which is a strategy for future integration with active devices in the system-on-chip concept. Measured insertion losses are−0.26 dB at 1 GHz and −0.65 dB at 6 GHz, return losses are −29 dB at 1 GHz and −25 dB at 6 GHz, and isolations are −52 dB at 1 GHz and −26 dB at 6 GHz. The device is driven by a metal electrothermal actuator, which achieves large displacements and contact forces at much lower temperatures than traditional polysilicon electrothermal actuators. The RF power handling characteristics are also addressed and measured.
Peer Reviewed
-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
-Microelectromechanical systems
-microwave switches
-microswitches
-loss -0.26 dB
-loss -0.65 dB
-loss -29 dB
-loss -25 dB
-frequency 1 GHz
-frequency 6 GHz
-electrothermally actuated RF MEMS switches
-low-resistivity substrate
-electrothermally actuated lateral resistive-contact switch
-low-gigahertz-band communication systems
-system-on-chip concept
-metal electrothermal actuator
-contact forces
-polysilicon electrothermal actuators
-RF power handling characteristics
-microelectromechanical systems switch
-Sistemes microelectromecànics
Article
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
         

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