Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/2456

Title:	Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet
Author:	Cheylan, Stephanie; Puigdollers i González, Joaquim; Bolink, Henk J.; Coronado Miralles, Eugenio; Voz Sánchez, Cristóbal; Alcubilla González, Ramón; Badenes Guia, Gonçal
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Electric conductivity. -Nanostructured materials. -Organic compounds. -Oxidation. -Doping -Electrical conductivity -Electronic density of states -Hole mobility -Hole transport layer -Molecular magnetic cluster -Molecular nanomagnet -Nanostructured materials -Organic compounds -Oxidation -Spin coating -Thin film transistors -Dipolar broadening -Conductivitat elèctrica -Materials nanoestructurats -Oxidació -Compostos orgànics
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Document type:	Article
Published by:	American Institute of Physics
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