Título:
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Effect of amorphous silicon carbide layer thickness on the passivation quality of crystalline silicon surface
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Autor/a:
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Ferré Tomas, Rafel; Martín García, Isidro; Vetter, Michael; Garin Escriva, Moises; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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Surface passivation of p-type crystalline silicon wafers by means of phosphorus-doped
hydrogenated amorphous silicon carbide films [a-SiCx(n):H] has been investigated. Particularly, we
focused on the effects of layer thickness on the c-Si surface passivation quality resulting in the
determination of the fixed charge density, Qf, within the a-SiCx(n):H film and the fundamental
recombination of holes, Sp0. The main result is that surface recombination velocity decreases with
film thickness up to 40 nm and then saturates. The evolution of the interface parameters indicates
that Qf could be located in a layer less than 10 nm thick. In addition, Sp0 increases with thinner films
probably due to different hydrogenation and saturation of interface dangling bonds during forming
gas annealing. |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Silicon -Microelectronics -Amorphous film -Amorphous semiconductors -Crystalline surface -Elemental semiconductors -Fixed charge density -Forming gas annealing -Fundamental hole recombination -Passivation -Hydrogenated film -Interface dangling bond -Layer thickness -p-type Crystalline wafer -Saturation -Semiconductor thin films -Silicon compounds -Surface passivation -Wide band gap semiconductors -Microelectrònica -Silici |
Derechos:
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Tipo de documento:
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Artículo |
Editor:
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American Institute of Physics
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