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Título:
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Noise model of a reverse-biased Cold-FET applied to the characterization of its ENR
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Autor/a:
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Maya Sánchez, Mª del Carmen; Lázaro Guillén, Antoni; Pradell i Cara, Lluís
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Otros autores:
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Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
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Abstract:
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This paper presents a broadband-noise circuit model for a cold-FET (Vds = 0 V) with a reverse-biased gate. The noise model includes two intrinsic uncorrelated noise-current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver-noise calibration. Experimental results up to 40 GHz are given. |
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Abstract:
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Peer Reviewed |
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Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques
-Noise Measurement
-Microwaves
-on-wafer noise source
-excess noise ratio
-small signal equivalent circuit model
-noise model
-calibration
-electric noise measurement
-equivalent circuits
-microwave field effect transistors
-S-parameters
-broadband-noise circuit model
-reverse-biased cold-FET
-noise-current sources
-excess noise ratio
-full receiver-noise calibration
-noise powers
-40 GHz
-Soroll -- Mesurament
-Microones |
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Derechos:
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Tipo de documento:
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Artículo |
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Editor:
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JOHN WILEY & SONS INC
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Compartir:
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