Direct extraction of all four transistor noise parameters from 50 noise figure measurements

All of RECERCAT

To access the full text documents, please follow this link: http://hdl.handle.net/2117/741

Title:	Direct extraction of all four transistor noise parameters from 50 noise figure measurements
Author:	Lázaro Guillén, Antoni; Pradell i Cara, Lluís; Beltrán, A.; O'Callaghan Castellà, Juan Manuel
Other authors:	Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions; Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
Abstract:	A new method for measuring the four noise parameters (NPs) of a transistor is presented. It is based on the determination of its intrinsic noise matrix elements (C11INT, C22INT, Re(C12INT), Im(C12INT)) by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques -Microwave transistors Noise -High-electron-mobility transistors -high electron mobility transistors -microwave transistors -semiconductor device noise -semiconductor device models -matrix algebra -equivalent circuits -Transistors de microones -Soroll -- Mesurament
Rights:
Document type:	Article
Published by:	IEE
Share: