Title:
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Analytical modelling of 200 GHz SiGe HBT high-frequency noise parameters
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Author:
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López González, Juan Miguel
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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This paper presents an analytical model for high-frequency noise of high-speed SiGe
heterojunction bipolar transistors (HBTs). The model allows circuit level noise parameters to
be obtained: the minimum noise figure, the noise resistance and the optimum admittance for
different bias and frequencies up to 64 GHz, including the quasi-saturation effect. The noise
parameters are determined directly from y-parameters. The analytical model is verified
through comparison with TCAD simulation results of the noise parameters using the field
impedance method as well as with measured data. The paper also reviews for 200 GHz SiGe
HBTs the latest y-parameters-based analytical noise models. Their bias and frequency
dependence is calculated and compared with device simulation. |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria de la telecomunicació -Signal theory (Telecommunication) -Low noise amplifiers -Senyal, Teoria del (Telecomunicació) |
Rights:
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Document type:
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Article - Published version Article |
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