Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation

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Título:	Variability and reliability analysis of CNFET in the presence of carbon nanotube density fluctuation
Autor/a:	García Almudéver, Carmen; Rubio Sola, Jose Antonio
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	Current carbon nanotube (CNT) synthesis processes are not perfect. One of the most critical issue is the presence of density variations in CNT growth. These variations are due to the lack of precise control of CNT location during the synthesis and the presence of metallic CNTs (m-CNTs). In this work we analyze the impact of CNT density fluctuations on carbon nanotube field effect transistor (CNFET) performance. A CNFET reliability analysis is also presented because of CNT density variations can cause a complete failure of CNFET.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica -Nanotubes -Nanotubs
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Tipo de documento:	Artículo - Versión publicada Objeto de conferencia
Editor:	IEEE Press. Institute of Electrical and Electronics Engineers
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García Almudéver, Carmen; Rubio Sola, Jose Antonio

García Almudéver, Carmen; Rubio Sola, Jose Antonio

García Almudéver, Carmen; Rubio Sola, Jose Antonio

Rubio Sola, Jose Antonio; García Almudéver, Carmen; Martin, Javier; Crespo, A.; Rodriguez, Rosa; Nafría Maqueda, Montserrat

Amat Bertran, Esteve; García Almudéver, Carmen; Aymerich Capdevila, Nivard; Canal Corretger, Ramon; Rubio Sola, Jose Antonio

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