Title:
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Macroporous silicon FET transistors for power applications
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Author:
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Vega, Didac; Najar, R.; Pina, Maria; Rodríguez Martínez, Ángel
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this paper we propose the use of macroporous
silicon for microelectronic devices. We propose and study four
different FET transistor structures using macroporous silicon as
base material. Macroporous silicon is a novel material whose
application most commonly suggested is as photonic crystals.
Nevertheless, this is a versatile structured material with
applications in many different areas, though microelectronics is
not usually cited. We suggest its use for electronics devices as a
FET transistor. The presented structures are studied by
simulation in device modelling software (TCAD). Two kinds of
operation modes have been considered: vertical (axial) and
horizontal (transverse) in relation to the etched pores in silicon.
One of the notable features of the described structures is the
ability to have a massive number of identical unitary-cell
transistor devices operating in parallel, having an all-around
gate. These features allow driving the gate with low controlling
voltages while handling large current density. Furthermore, the
external device volume remains small thanks to the very large
area-to-volume ratio. Thanks to the considerable amount of
active area achievable, we further propose the use of such devices
for low-voltage power applications. In this paper we present the
obtained results of our simulations of the proposed devices. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Transistors -Silicon -Porous silicon -Computer software -Electron devices -Microelectronics -Silicon -Transistors -Transistors -Silici |
Rights:
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Attribution-NonCommercial-NoDerivs 3.0 Spain
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
Document type:
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Article - Published version Conference Object |
Published by:
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Institute of Electrical and Electronics Engineers (IEEE)
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