Título:
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Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)
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Autor/a:
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Villar, Fernando; Antony, Aldrin; Escarré i Palou, Jordi; Ibarz, D.; Roldán, Rubén; Stella, Marco; Muñoz Ramos, David; Asensi López, José Miguel; Bertomeu i Balagueró, Joan
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Otros autores:
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Universitat de Barcelona |
Abstract:
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Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector. |
Materia(s):
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-Silici -Cèl·lules solars -Semiconductors amorfs -Deposició química en fase vapor -Temperatures baixes -Silicon -Solar cells -Amorphous semiconductors -Chemical vapor deposition -Low temperatures |
Derechos:
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(c) Elsevier B.V., 2009
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Tipo de documento:
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Artículo Artículo - Versión aceptada |
Editor:
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Elsevier B.V.
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