Title:
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Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C
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Author:
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Muñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Damon-Lacoste, J.; Roca i Cabarrocas, P. (Pere)
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Other authors:
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Universitat de Barcelona |
Abstract:
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In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact. |
Subject(s):
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-Deposició química en fase vapor -Cèl·lules solars -Teoria quàntica -Microelectrònica -Chemical vapor deposition -Solar cells -Quantum theory -Microelectronics |
Rights:
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(c) Elsevier B.V., 2008
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Document type:
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Article Article - Accepted version |
Published by:
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Elsevier B.V.
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