Title:
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On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers
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Author:
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Bertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
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Other authors:
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Universitat de Barcelona |
Abstract:
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This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states. |
Subject(s):
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-Semiconductors amorfs -Optoelectrònica -Espectroscòpia -Silici -Semimetalls -Amorphous semiconductors -Optoelectronics -Spectrum analysis -Silicon -Semimetals |
Rights:
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(c) Elsevier B.V., 1993
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Document type:
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Article Article - Accepted version |
Published by:
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Elsevier B.V.
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