Para acceder a los documentos con el texto completo, por favor, siga el siguiente enlace: http://hdl.handle.net/2445/47603
Título:
|
Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holder
|
Autor/a:
|
Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis
|
Otros autores:
|
Universitat de Barcelona |
Abstract:
|
This paper deals with the structural properties of a-Si:H/a-Si1-xCx: H multilayers deposited by glow-discharge decomposition of SiH4 and SiH4 and CH4 mixtures. The main feature of the rf plasma reactor is an automated substrate holder. The plasma stabilization time and its influence on the multilayer obtained is discussed. A series of a-Si:H/a-Si1-xCx: H multilayers has been deposited and characterized by secondary ion mass spectrometry (SIMS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). No asymmetry between the two types of interface has been observed. The results show that the multilayers present a very good periodicity and low roughness. The difficulty of determining the abruptness of the multilayer at the nanometer scale is discussed. |
Materia(s):
|
-Silici -Semiconductors amorfs -Cèl·lules solars -Pel·lícules fines -Transistors -Nanotecnologia -Deposició química en fase vapor -Silicon -Amorphous semiconductors -Solar cells -Thin films -Transistors -Nanotechnology -Chemical vapor deposition |
Derechos:
|
(c) Elsevier Ltd, 1993
|
Tipo de documento:
|
Artículo Artículo - Versión aceptada |
Editor:
|
Elsevier Ltd
|
Compartir:
|
|
Mostrar el registro completo del ítem