Title:
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An accurate and Verilog-A compatible compact model for graphene field-effect transistors
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Author:
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Landauer, Gerhard Martin; González Jiménez, José Luis; Jiménez Jiménez, David
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Other authors:
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Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach extends modeling accuracy to the low-voltage biasing regime and improves the prediction of current saturation. These advantages are highlighted by a comparison study of the drain current, transconductance, output conductance, and intrinsic gain. The model has been implemented in Verilog-A and is compatible with conventional circuit simulators. It is provided as a tool for the exploration of GFET-based integrated circuit design. The model shows good agreement with measurement data from GFET prototypes. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics -Nanotechnology -Dirac point -GFET-based integrated circuit design -Verilog-A compatible compact model -circuit simulators -current saturation -current-voltage relation -drain current -drift-diffusion model -energy levels -graphene field-effect transistor -intrinsic gain -low-voltage biasing regime -output conductance -transconductance -Nanotecnologia |
Rights:
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Document type:
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Article - Published version Article |
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