Title:
|
The valence band alignment at ultrathin SiO2/Si interfaces
|
Author:
|
Alay, Josep Lluís; Hirose, M.
|
Other authors:
|
Universitat de Barcelona |
Abstract:
|
High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface. |
Subject(s):
|
-Semiconductors -Interfícies (Ciències físiques) -Semiconductors -Interfaces (Physical sciences) |
Rights:
|
(c) American Institute of Physics , 1997
|
Document type:
|
Article Article - Published version |
Published by:
|
American Institute of Physics
|
Share:
|
|