|
Title:
|
Far-field narrowing in spatially modulated broad-area edge-emitting semiconductor amplifiers
|
|
Author:
|
Radziunas, Mindaugas; Herrero Simon, Ramon; Botey Cumella, Muriel; Staliunas, Kestutis
|
|
Other authors:
|
Universitat Politècnica de Catalunya. Departament de Física; Universitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers |
|
Abstract:
|
© 2015 [Optical Society of America]. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for
commercial purposes, or modifications of the content of this paper are prohibited. |
|
Abstract:
|
We perform a detailed theoretical analysis of the far-field narrowing in broad-area edge-emitting semiconductor amplifiers that are electrically injected through contacts periodically modulated in both longitudinal and transverse directions. The beam propagation properties within the semiconductor amplifier are explored by a (1 + 2)-dimensional traveling wave model and its coupled-mode approximation. Assuming a weak field regime, we analyze the impact of different parameters and modulation geometry on the narrowing of the principal far-field component. |
|
Abstract:
|
Peer Reviewed |
|
Subject(s):
|
-Àrees temàtiques de la UPC::Física
-Àrees temàtiques de la UPC::Ciències de la visió::Òptica física
-Power amplifiers
-Lasers
-spatiotemporal dynamics
-beam-propagation
-power-amplifiers
-area lasers
-feedback
-simulation
-NM
-Amplificadors de potència
-Làsers |
|
Rights:
|
|
|
Document type:
|
Article - Submitted version
Article |
|
Share:
|
|
