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Título:
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RRAM variability and its mitigation schemes
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Autor/a:
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Pouman, Peyman; Amat, Esteve; Hamdioui, Said; Rubio Sola, Jose Antonio
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability. |
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Abstract:
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Peer Reviewed |
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Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics
-Random access memory
-Reliability
-RRAM
-Reliability
-Process variability
-Mitagation
-Emerging memory
-Resistive Memory
-Memòria d'accés aleatori
-Ordinadors -- Memòries semiconductores
-Fiabilitat (Enginyeria) |
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Derechos:
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Tipo de documento:
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Artículo - Versión presentada
Objeto de conferencia |
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