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Título:	TFET-Based power management circuit for RF energy harvesting
Autor/a:	Nunes Cavalheiro, David Manuel; Moll Echeto, Francisco de Borja; Valtchev, Stanimir
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	This paper proposes a Tunnel FET (TFET)-based power management circuit (PMC) for ultra-low power RF energy harvesting applications. In contrast with conventional thermionic devices, the band-to-band tunneling mechanism of TFETs allows a better switching performance at sub-0.2 V operation. As a result, improved efficiencies in RF-powered circuits are achieved, thanks to increased rectification performance at low power levels and to the reduced energy required for a proper PMC operation. It is shown by simulations that heterojunction TFET devices designed with III-V materials can improve the rectification process at received power levels below -20 dBm (915 MHz) when compared to the application of homojunction III-V TFETs and Si FinFETs. For an available power of -25 dBm, the proposed converter is able to deliver 1.1 µW of average power (with 0.5 V) to the output load with a boost efficiency of 86%.
Materia(s):	-Àrees temàtiques de la UPC::Enginyeria elèctrica -Energy harvesting -Energy harvesting -power management -radio-frequency -tunnel FET -UHF -ultra-low power -Enginyeria elèctrica -Energia -Energia -- Captació
Derechos:	Attribution-NonCommercial-NoDerivs 3.0 Spain http://creativecommons.org/licenses/by-nc-nd/3.0/es/
Tipo de documento:	Artículo - Versión presentada Artículo
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