Título:
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MOSFET degradation dependence on input signal power in a RF power amplifier
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Autor/a:
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Crespo Yepes, Albert; Barajas Ojeda, Enrique; Martin Martínez, Javier; Mateo Peña, Diego; Aragonès Cervera, Xavier; Rodríguez Martínez, Rosana; Nafría Maqueda, Montserrat
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
Abstract:
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Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reduction is the main cause of the RF degradation in this circuit. |
Materia(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Components electrònics::Transistors -Metal oxide semiconductor field-effect transistors -Metal oxide semiconductors -CMOS -MOSFET degradation -RF power amplifier -RF stress -Aging -Transistors MOSFET -Semiconductors -Metall-òxid-semiconductors complementaris -Metall-òxid-semiconductors |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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