Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations

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Title:	Design of a broadband CMOS RF power amplifier to establish device-circuit aging correlations
Author:	Barajas Ojeda, Enrique; Mateo Peña, Diego; Aragonès Cervera, Xavier; Crespo Yepes, Albert; Rodríguez Martínez, Rosana; Martin Martínez, Javier; Nafría Maqueda, Montserrat
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
Abstract:	This paper presents the design of a Broadband CMOS RF Power Amplifier, suitable to be stressed at circuit level but with the possibility to be measured both at circuit and at device level. It allows establishing a relation between the degradation of circuit's RF performances and those of its individual devices parameters. The test structure, measurement set-up and procedure are described in detail.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica -Power amplifiers -Microelectronics -Ageing -CMOS integrated circuits -Integrated circuit design -Integrated circuit testing -Radiofrequency power amplifiers -Amplificadors de potència -Microelectrònica
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Document type:	Article - Published version Conference Object
Published by:	Institute of Electrical and Electronics Engineers (IEEE)
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