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Título:
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Reliability issues in RRAM ternary memories affected by variability and aging mechanisms
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Autor/a:
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Rubio Sola, Jose Antonio; Escudero, Manuel; Pouyan, Peyman
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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Abstract:
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Resistive switching Random Access Memories (RRAM) are being considered as a promising alternative for conventional memories mainly due to their high speed, scalability, CMOS compatibility, Non-Volatile behavior (NVM), and consequent orientation to low power consumption. Advances in the RRAM technology as well as enhancement of the control of the cells are opening the use of these devices for multi-valued logic. But the cycle-to-cycle variability and the still reduced endurance are becoming serious limitations. This paper analyzes the impact of both mechanisms on 1T1R cells and suggests potential adaptive mechanisms to enlarge its lifetime. |
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Abstract:
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Peer Reviewed |
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Materia(s):
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-Àrees temàtiques de la UPC::Informàtica::Sistemes d'informació::Emmagatzematge i recuperació de la informació
-Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
-Computer storage devices
-Integrated circuits
-RRAM devices
-Ternary memories
-Variability
-Endurance
-Aging
-Adaptive mechanism
-Ordinadors -- Dispositius de memòria
-Circuits integrats |
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Derechos:
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Tipo de documento:
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Artículo - Versión presentada
Objeto de conferencia |
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Editor:
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Institute of Electrical and Electronics Engineers (IEEE)
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Compartir:
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