Título:
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Characterization and application of a-SiCx:H films for the passivation of the c-Si surface
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Autor/a:
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Martín Campos, Ignacio Clemente; Vetter, M; Orpella García, Alberto; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Marsal, L F; Pallarès Marzal, Josep; Alcubilla González, Ramón
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Otros autores:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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In this work we investigate the effects of typical thermal treatments on c-Si surface passivation by intrinsic a-SiCx:H films. First, a forming gas anneal (FGA), (400 °C, 30 min in H2/N2) is applied resulting in an improvement in surface passivation. The best result is a surface recombination velocity lower than 23 cm s-1. A second thermal step (730 °C, 30 s) is studied to try and simulate the firing step for screen-printed contacts. This annealing has no effect in surface passivation indicating that a-SiCx:H films are promising candidates for c-Si surface passivation in the photovoltaic industry. In order to analyze the improvement of surface passivation after FGA, a physical model of surface recombination at the a-SiCx:H/c-Si interface is developed. This improvement is directly connected to a reduction in fundamental recombination velocities of electrons and holes at the interface. A possible explanation could be the reduction in the interface state density due to hydrogen saturation of dangling bonds. |
Abstract:
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Peer Reviewed |
Materia(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Solar cells -Amorphous semiconductors -Surface passivation -Amorphous semiconductors -Solar cells -Cèl·lules solars -Semiconductors amorfs |
Derechos:
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Tipo de documento:
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Artículo - Versión publicada Artículo |
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