Title:
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Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide
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Author:
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Orpella García, Alberto; Vetter, Michael; Ferré Tomas, Rafel; Martín García, Isidro; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Alcubilla González, Ramón
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Other authors:
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Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
Abstract:
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We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain values in the range of 300 fA cm-2 for sheet resistances around 100 O¿sq. Finally, we obtain effective surface recombination velocity values around 104 cm s-1 by fitting the measured values with PC1D simulated ones. |
Abstract:
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Peer Reviewed |
Subject(s):
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-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Silicon-carbide thin film -Solar cells -Amorphous silicon carbide (a-SIC:H(n)) -Solar cells -Emitter saturation current density -Passivation -Capes fines de carbur de silici -Cèl·lules solars |
Rights:
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Document type:
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Article - Published version Article |
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