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Title:	Bifacial heterojunction silicon solar cells by Hot-Wire CVD with open circuit voltage exceeding 600 mV
Author:	Voz Sánchez, Cristóbal; Muñoz Cervantes, Delfina; Fonrodona, Marta; Martín García, Isidro; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Escarré, Jordi; Bertomeu Balaguero, Joan; Andreu Batallé, Jordi
Other authors:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Double-sided (bifacial) heterojunction silicon solar cells have been fabricated by Hot-Wire CVD on both p- and n-type crystalline silicon substrates. In these devices, doped microcrystalline silicon layers are combined with thin intrinsic amorphous silicon buffers. Such heterojunction with intrinsic thin layer concept is applied to obtain both the low temperature deposited emitter and back surface field contact. Especially remarkable is the performance of the solar cell fabricated on p-type c-Si. This device yields a total area (1.4 cm2) conversion efficiency of 13.3%, with an open-circuit voltage of 619 mV, short-circuit current density of 29.0 mA cm- 2 and fill factor of 74.1%. The substrate temperature is kept below 200 °C during the whole fabrication process.
Abstract:	Peer Reviewed
Subject(s):	-Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars -Solar cells -Silicon -Heterojunction -Solar cell -Hot-Wire CVD -Cèl·lules solars
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Document type:	Article - Published version Article
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