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Título:	Fullerene thin-film transistors fabricated on polymeric gate dielectric
Autor/a:	Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Cheylan, Stephanie; Orpella García, Alberto; Vetter, M; Alcubilla González, Ramón
Otros autores:	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica; Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
Abstract:	Thin-film transistors with fullerene as n-type organic semiconductor have been fabricated. A polymeric gate dielectric, polymethyl methacrylate, has been used as an alternative to usual inorganic dielectrics. No significant differences in the microstructure of fullerene thin-films grown on polymethyl methacrylate were observed. Devices with either gold or aluminium top electrodes have been fabricated. Although the lower work-function of aluminium compared to gold should favour electron injection, similar field-effect mobilities in the range of 10- 2 cm2 V- 1 s- 1 were achieved in both cases. Actually, the output characteristics indicate that organic thin-film transistors behave more linearly with gold than with aluminium electrodes. These results confirm that not only energy barriers determine carrier injection at metal/organic interfaces, but also chemical interactions.
Abstract:	Peer Reviewed
Materia(s):	-Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors -Organic semiconductors -Organic semiconductors -Electronic devices -Semiconductors orgànics
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Tipo de documento:	Artículo - Versión publicada Artículo
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