The time dependence of the 2 T 2 → 2 E photoluminescence transition of Ti 3 + Ga in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time τ 0 =2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by Ti 3 + Ga in the excited state whereas the results on p-type conducting samples suggest hole localization at the Ti 3 + Ga .