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Title:	Equilibrium and nonequilibrium gap-state distribution in amorphous silicon
Author:	Asensi López, José Miguel; Andreu i Batallé, Jordi
Other authors:	Universitat de Barcelona
Abstract:	A general and straightforward analytical expression for the defect-state-energy distribution of a-Si:H is obtained through a statistical-mechanical treatment of the hydrogen occupation for different sites. Broadening of available defect energy levels (defect pool) and their charge state, both in electronic equilibrium and nonequilibrium steady-state situations, are considered. The model gives quantitative results that reproduce different defect phenomena, such as the thermally activated spin density, the gap-state dependence on the Fermi level, and the intensity and temperature dependence of light-induced spin density. An interpretation of the Staebler-Wronski effect is proposed, based on the ''conversion'' of shallow charged centers to neutrals near the middle of the gap as a consequence of hydrogen redistribution.
Subject(s):	-Conductivitat elèctrica -Propietats tèrmiques -Semiconductors amorfs -Electric conductivity -Thermal properties -Amorphous semiconductors
Rights:	(c) The American Physical Society, 1993
Document type:	Article Article - Published version
Published by:	The American Physical Society
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