Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

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Title:	Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization
Author:	Serre, Christophe; Calvo Barrio, Lorenzo; Pérez Rodríguez, Alejandro; Romano Rodríguez, Alberto; Morante i Lleonart, Joan Ramon; Pacaud, Y.; Kögler, Reinhard; Heera, Viton; Skorupa, Wolfgang
Other authors:	Universitat de Barcelona
Abstract:	The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x‐ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35
Subject(s):	-Implantació d'ions -Silici -Ion implantation -Silicon
Rights:	(c) American Institute of Physics, 1996
Document type:	Article Article - Published version
Published by:	American Institute of Physics
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