Título:
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Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP
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Autor/a:
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Peiró Martínez, Francisca; Cornet i Calveras, Albert; Morante i Lleonart, Joan Ramon
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Otros autores:
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Universitat de Barcelona |
Abstract:
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The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed. |
Materia(s):
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-Microscòpia electrònica -Semiconductors -Electron microscopy -Semiconductors |
Derechos:
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(c) American Institute of Physics, 1995
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Tipo de documento:
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Artículo Artículo - Versión publicada |
Editor:
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American Institute of Physics
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Compartir:
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