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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Roura Grabulosa, Pere |
dc.contributor.author | Vilà i Arbonès, Anna Maria |
dc.contributor.author | Bosch Estrada, José |
dc.contributor.author | López de Miguel, Manuel |
dc.contributor.author | Cornet i Calveras, Albert |
dc.contributor.author | Morante i Lleonart, Joan Ramon |
dc.contributor.author | Westwood, David I. |
dc.date | 2012-05-03T06:21:51Z |
dc.date | 2012-05-03T06:21:51Z |
dc.date | 1997-07-01 |
dc.date | 2012-04-20T11:12:59Z |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 112466 |
dc.identifier.uri | http://hdl.handle.net/2445/24782 |
dc.format | 6 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.365881 |
dc.relation | Journal of Applied Physics, 1997, vol. 82, num. 3, p. 1147-1152 |
dc.relation | http://dx.doi.org/10.1063/1.365881 |
dc.rights | (c) American Institute of Physics, 1997 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Propietats òptiques |
dc.subject | Semiconductors |
dc.subject | Optical properties |
dc.subject | Semiconductors |
dc.title | Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |