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dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Pastor Pastor, David |
dc.contributor.author | Cuscó i Cornet, Ramon |
dc.contributor.author | Artús i Surroca, Lluís |
dc.contributor.author | Iborra, Enrique |
dc.contributor.author | Jiménez, J. |
dc.contributor.author | Peiró Martínez, Francisca |
dc.contributor.author | González Díaz, Germán |
dc.contributor.author | Calleja Pardo, Enrique |
dc.date | 2012-05-03T11:52:55Z |
dc.date | 2012-05-03T11:52:55Z |
dc.date | 2006-08-21 |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 542837 |
dc.identifier.uri | http://hdl.handle.net/2445/24885 |
dc.format | 5 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.relation | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.2259817 |
dc.relation | Journal of Applied Physics, 2006, vol. 100, núm. 4, p. 43508-1-43508-5 |
dc.relation | http://dx.doi.org/10.1063/1.2259817 |
dc.rights | (c) American Institute of Physics, 2006 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Ciència dels materials |
dc.subject | Cristal·lografia |
dc.subject | Materials science |
dc.subject | Crystallography |
dc.title | The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.description.abstract |