Experimental observation of oxygen-related defect state in pentacene thin films

Home | About RECERCAT | Contact

Català | Castellano

All of RECERCAT

By Communities &
Collections By Defense Date By Authors By Titles By Subject

This Collection

By Defense Date By Authors By Titles By Subject

Statistics

View Statistics All RECERCAT

My RECERCAT

Other repositories directory

RECERCAT Home > Universitat Politècnica de Catalunya > Documents de recerca > View document

To access the full text documents, please follow this link: http://hdl.handle.net/2117/2425

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor	Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.contributor.author	Nadaždy, Vojtech
dc.contributor.author	Durný, Rudolf
dc.contributor.author	Puigdollers i González, Joaquim
dc.contributor.author	Voz Sánchez, Cristóbal
dc.contributor.author	Cheylan, Stephanie
dc.contributor.author	Gmucová, K.
dc.date	2006-11-20
dc.identifier.citation	Nadaždy, V.; Durný, R.; Puigdollers, J.; Voz, C.; Cheylan, S.; Gmicová, K. Experimental observation of oxygen-related defect state in pentacene thin films. A: Applied Physics Letters, 2007, vol,. 90, 092112.
dc.identifier.citation	0003-6951
dc.identifier.citation	10.1063/1.2710203
dc.identifier.uri	http://hdl.handle.net/2117/2425
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	CICYT-TEC2005-02716
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject	Pentacene
dc.subject	Thin films
dc.subject	Schottky diode
dc.subject	Attempt-to-escape frequency
dc.subject	Hydrogen atom replacement
dc.subject	Pentacene thin films
dc.subject	Defects in pentacene
dc.subject	Negative bias voltage
dc.subject	Organic semiconductors
dc.subject	Oxigen atom
dc.subject	Positive bias voltage
dc.subject	Schottky barrier
dc.subject	Nanotecnologia
dc.title	Experimental observation of oxygen-related defect state in pentacene thin films
dc.type	info:eu-repo/semantics/article
dc.description.abstract	The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed under a negative/positive bias voltage applied to the aluminum/ pentacene Schottky diode at room temperature in air. Annealing the sample in vacuum at 360 K removes the defect and prevents its creation by application of any bias voltage in vacuum. Considering recent calculations of defects in pentacene the authors assume that the defect is formed by replacing one of the hydrogen atoms by an oxygen atom (C22 H13 O).
dc.description.abstract	Peer Reviewed

Show simple item record

All of RECERCAT

This Collection

Statistics

My RECERCAT

Related documents

Other documents of the same author