Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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Title:	Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
Author:	Kail, F.; Farjas Silva, Jordi; Roura Grabulosa, Pere; Secouard, C.; Nos Aguilà, Oriol; Bertomeu i Balagueró, Joan; Alzina Sureda, Francesc; Roca i Cabarrocas, P. (Pere)
Other authors:	Universitat de Barcelona
Abstract:	The structural relaxation of pure amorphous silicon a-Si and hydrogenated amorphous silicon a-Si:H materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon.
Subject(s):	-Semiconductors amorfs -Calorimetria -Hidrogen -Silici -Espectroscòpia Raman -Amorphous semiconductors -Calorimetry -Hydrogen -Silicon -Raman spectroscopy
Rights:	(c) American Institute of Physics , 2010
Document type:	Article Article - Published version
Published by:	American Institute of Physics
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