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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits |
dc.contributor.author | Rodriguez Duenas, Saul |
dc.contributor.author | Vaziri, Sam |
dc.contributor.author | Ostling, Mikael |
dc.contributor.author | Rusu, Ana |
dc.contributor.author | Alarcón Cot, Eduardo José |
dc.contributor.author | Lemme, Max |
dc.date | 2012-08 |
dc.identifier.citation | Rodriguez, S. [et al.]. RF performance projections of graphene FETs vs. silicon MOSFETs. "ECS SOLID STATE LETTERS", Agost 2012, vol. 1, núm. 5, p. 39-41. |
dc.identifier.citation | 2162-8742 |
dc.identifier.citation | 10.1149/2.001205ssl |
dc.identifier.uri | http://hdl.handle.net/2117/19953 |
dc.language.iso | eng |
dc.relation | http://ssl.ecsdl.org/content/1/5/Q39 |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/307311/EU/Integrating Graphene Devices/INTEGRADE |
dc.relation | info:eu-repo/grantAgreement/EC/FP7/228229/EU/Open silicon based research platform for emerging devices/OSIRIS |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights | info:eu-repo/semantics/openAccess |
dc.rights | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència |
dc.subject | Silicon |
dc.subject | Power amplifiers |
dc.subject | Field-effect transistors |
dc.subject | Silici |
dc.subject | Amplificadors de potència |
dc.title | RF performance projections of graphene FETs vs. silicon MOSFETs |
dc.type | info:eu-repo/semantics/draft |
dc.type | info:eu-repo/semantics/article |
dc.description.abstract | |
dc.description.abstract |