To access the full text documents, please follow this link: http://hdl.handle.net/2445/47382
dc.contributor | Universitat de Barcelona |
---|---|
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Peiró, D. |
dc.contributor.author | Bertomeu i Balagueró, Joan |
dc.contributor.author | Soler Vilamitjana, David |
dc.contributor.author | Fonrodona Turon, Marta |
dc.contributor.author | Andreu i Batallé, Jordi |
dc.date | 2013-10-29T16:15:45Z |
dc.date | 2013-10-29T16:15:45Z |
dc.date | 2000 |
dc.date | 2013-10-29T16:15:46Z |
dc.identifier.citation | 0921-5107 |
dc.identifier.citation | 147805 |
dc.identifier.uri | http://hdl.handle.net/2445/47382 |
dc.format | 10 p. |
dc.format | application/pdf |
dc.language.iso | eng |
dc.publisher | Elsevier B.V. |
dc.relation | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0921-5107(99)00308-6 |
dc.relation | Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2000, vol. 69-70, p. 278-283 |
dc.relation | http://dx.doi.org/10.1016/S0921-5107(99)00308-6 |
dc.rights | (c) Elsevier B.V., 2000 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Silici |
dc.subject | Deposició química en fase vapor |
dc.subject | Temperatures baixes |
dc.subject | Propietats elèctriques |
dc.subject | Pel·lícules fines |
dc.subject | Energia solar |
dc.subject | Transistors |
dc.subject | Bor |
dc.subject | Fòsfor |
dc.subject | Silicon |
dc.subject | Chemical vapor deposition |
dc.subject | Low temperatures |
dc.subject | Electric properties |
dc.subject | Thin films |
dc.subject | Solar energy |
dc.subject | Transistors |
dc.subject | Boron |
dc.subject | Phosphorus |
dc.title | Optimisation of doped microcrystalline silicon films deposited at very low temperatures by Hot-Wire CVD |
dc.type | info:eu-repo/semantics/article |
dc.type | info:eu-repo/semantics/acceptedVersion |
dc.description.abstract |