Per accedir als documents amb el text complet, si us plau, seguiu el següent enllaç: http://hdl.handle.net/2445/50485
Títol:
|
Resistance Switching in Transparent Magnetic MgO Films
|
Autor/a:
|
Jambois, Olivier; Carreras Seguí, Paz; Antony, Aldrin; Bertomeu i Balagueró, Joan; Martínez Boubeta, José Carlos
|
Altres autors:
|
Universitat de Barcelona |
Abstract:
|
We have studied the abrupt and hysteretic changes of resistance in MgO-based capacitor devices. The switching behavior is discussed in terms of the formation and rupture of conduction filaments due to the migration of structural defects in the electric field, together with the redox events which affects the mobile carriers. The results presented in this paper suggest that MgO transparent films combining ferromagnetism and multilevel switching characteristics might pave the way for a new method for spintronic multibit data storage. |
Matèries:
|
-Òxid de magnesi -Pel·lícules fines -Espintrònica -Ferromagnetisme -Matèria condensada -Magnesium oxide -Thin films -Spintronics -Ferromagnetism -Condensed matter |
Drets:
|
(c) Elsevier Ltd, 2011
|
Tipus de document:
|
Article Article - Versió acceptada |
Publicat per:
|
Elsevier Ltd
|
Compartir:
|
|
Mostra el registre complet del document