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Title:
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An accurate and Verilog-A compatible compact model for graphene field-effect transistors
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Author:
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Landauer, Gerhard Martin; González Jiménez, José Luis; Jiménez Jiménez, David
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Other authors:
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Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
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Abstract:
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The present paper provides an accurate drift-diffusion model of the graphene field-effect transistor (GFET). A precise yet mathematically simple current-voltage relation is derived by focusing on device physics at energy levels close to the Dirac point. With respect to previous work, our approach extends modeling accuracy to the low-voltage biasing regime and improves the prediction of current saturation. These advantages are highlighted by a comparison study of the drain current, transconductance, output conductance, and intrinsic gain. The model has been implemented in Verilog-A and is compatible with conventional circuit simulators. It is provided as a tool for the exploration of GFET-based integrated circuit design. The model shows good agreement with measurement data from GFET prototypes. |
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Abstract:
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Peer Reviewed |
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Subject(s):
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-Àrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
-Nanotechnology
-Dirac point
-GFET-based integrated circuit design
-Verilog-A compatible compact model
-circuit simulators
-current saturation
-current-voltage relation
-drain current
-drift-diffusion model
-energy levels
-graphene field-effect transistor
-intrinsic gain
-low-voltage biasing regime
-output conductance
-transconductance
-Nanotecnologia |
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Rights:
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Document type:
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Article - Published version
Article |
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