Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene

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dc.contributor	Barcelona Supercomputing Center
dc.contributor.author	Cresti, Alessandro
dc.contributor.author	Louvet, Thibaud
dc.contributor.author	Ortmann, Frank
dc.contributor.author	van Tuan, Dinh
dc.contributor.author	Lenarczyk, Pawel
dc.contributor.author	Huhs, Georg
dc.contributor.author	Roche, Stephan
dc.date	2013-04-08
dc.identifier.citation	Cresti, Alessandro [et al.]. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. "Crystals", 08 Abril 2013, vol. 3, núm. 2, p. 289-305.
dc.identifier.citation	2073-4352
dc.identifier.citation	10.3390/cryst3020289
dc.identifier.uri	http://hdl.handle.net/2117/84763
dc.language.iso	eng
dc.publisher	MDPI
dc.relation	http://www.mdpi.com/2073-4352/3/2/289
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Enginyeria electrònica
dc.subject	Vacancies
dc.subject	Graphene
dc.subject	Vacancies
dc.subject	Quantum transport
dc.subject	Química quàntica
dc.title	Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point.
dc.description.abstract	A.C. acknowledges the support of Fondation Nanosciences via the RTRA Dispograph project. S.R. acknowledges the support from SAMSUNG within the Global Innovation Program.
dc.description.abstract	Peer Reviewed

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