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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Vetter, Michael |
dc.contributor.author | Garin Escriva, Moises |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2005-12 |
dc.identifier.citation | Martin, I., Vetter, M., Garin, M., Orpella, A., Voz, C., Puigdollers, J., Alcubilla, R. Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition. "Journal of applied physics", Desembre 2005, vol. 98, núm. 11. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.2140867 |
dc.identifier.uri | http://hdl.handle.net/2117/117799 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.relation | http://scitation.aip.org/content/aip/journal/jap/98/11/10.1063/1.2140867 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Cristalls |
dc.subject | Solid state physics |
dc.subject | Thin films |
dc.subject | Surface passivation |
dc.subject | Lifetime |
dc.subject | Física de l'estat sòlid |
dc.title | Crystalline Silicon surface passivation with amorphous SiCx:H films deposited by Plasma- Enhanced Chemical Vapor Deposition |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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