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dc.contributor | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
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dc.contributor | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.contributor.author | Ferré Tomas, Rafel |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Vetter, Michael |
dc.contributor.author | Torres, I |
dc.contributor.author | Alcubilla González, Ramón |
dc.date | 2006-10 |
dc.identifier.citation | Ferre, R., Martin, I., Ortega, P., Vetter, M., Torres, I., Alcubilla, R. N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers. "Journal of applied physics", Octubre 2006, vol. 100, núm. 7, p. 1-7. |
dc.identifier.citation | 0021-8979 |
dc.identifier.citation | 10.1063/1.2354323 |
dc.identifier.uri | http://hdl.handle.net/2117/117880 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics (AIP) |
dc.relation | https://aip.scitation.org/doi/10.1063/1.2354323 |
dc.rights | info:eu-repo/semantics/openAccess |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject | Solar cells |
dc.subject | Diffusion |
dc.subject | Doping |
dc.subject | Silicon |
dc.subject | Current density |
dc.subject | Optical constants |
dc.subject | Public address systems |
dc.subject | Carbides |
dc.subject | Surface passivation |
dc.subject | Passivation |
dc.subject | Plasma chemical vapor deposition |
dc.subject | Cèl·lules solars |
dc.title | N-Type emitter surface passivaion in C-Si solar cells by means of antireflective amorphous Silicon Carbide layers |
dc.type | info:eu-repo/semantics/publishedVersion |
dc.type | info:eu-repo/semantics/article |
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