Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

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To access the full text documents, please follow this link: http://hdl.handle.net/10256/3297

dc.contributor.author	Kail, Fatiha
dc.contributor.author	Farjas Silva, Jordi
dc.contributor.author	Roura Grabulosa, Pere
dc.contributor.author	Secouard, Christopher
dc.contributor.author	Nos, Oriol
dc.contributor.author	Bertomeu, Joan Prat
dc.contributor.author	Alzina, F.
dc.contributor.author	Roca i Cabarrocas, Pere
dc.date	2011-03-23T12:12:54Z
dc.date	2010-12-14T10:36:04Z
dc.date	2011-03-23T12:12:54Z
dc.date	2010
dc.identifier.citation	Kail, F., Farjas, J., Roura, P., Secouard, C., Nos, O., Bertomeu, J., Alzina, F., i Roca I Cabarrocas, P. (2010). Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments. Applied Physics Letters, 97 (3), 031918. Recuperat 23 març 2011, a http://link.aip.org/link/doi/10.1063/1.3464961
dc.identifier.citation	0021-9606 (versió paper)
dc.identifier.citation	1089-7690 (versió electrònica)
dc.identifier.citation	012668
dc.identifier.uri	http://hdl.handle.net/10256/3297
dc.format	application/pdf
dc.language.iso	eng
dc.publisher	American Institute of Physics
dc.relation	http://dx.doi.org/10.1063/1.3464961
dc.relation	Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.3464961
dc.relation	© Applied Physics Letters, 2010, vol. 97, núm. 3, p. 244308
dc.relation	Articles publicats (D-F)
dc.rights	Tots els drets reservats
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Amorphous semiconductors
dc.subject	Espectroscòpia Raman
dc.subject	Hidrogenació
dc.subject	Semiconductors amorfs
dc.subject	Silici
dc.subject	Hydrogenation
dc.subject	Raman spectroscopy
dc.title	Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments
dc.type	info:eu-repo/semantics/article
dc.type	info:eu-repo/semantics/publishedVersion
dc.description.abstract	The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

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