Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability

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To access the full text documents, please follow this link: http://hdl.handle.net/2117/121204

dc.contributor	Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors
dc.contributor	Universitat Politècnica de Catalunya. VIRTUOS - Virtualisation and Operating Systems
dc.contributor.author	Liang, Xiaoyao
dc.contributor.author	Canal Corretger, Ramon
dc.contributor.author	Wei, Gu-Yeon
dc.date	2008-02
dc.identifier.citation	Liang, X., Canal, R., Wei, G.-Y. Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability. "IEEE micro", Febrer 2008, vol. 28, núm. 1, p. 60-68.
dc.identifier.citation	0272-1732
dc.identifier.citation	10.1109/MM.2008.12
dc.identifier.uri	http://hdl.handle.net/2117/121204
dc.language.iso	eng
dc.relation	https://ieeexplore.ieee.org/document/4460513/
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Àrees temàtiques de la UPC::Informàtica::Arquitectura de computadors
dc.subject	Memory management (Computer science)
dc.subject	Microprocessors
dc.subject	Cache memory
dc.subject	Cache storage
dc.subject	DRAM chips
dc.subject	Microprocessor chips
dc.subject	SRAM chips
dc.subject	System-on-chip
dc.subject	Transistors
dc.subject	Gestió de memòria (Informàtica)
dc.subject	Microprocessadors
dc.subject	Memòria ràpida de treball (Informàtica)
dc.title	Replacing 6T SRAMs with 3T1D DRAMs in the L1 data cache to combat process variability
dc.type	info:eu-repo/semantics/publishedVersion
dc.type	info:eu-repo/semantics/article
dc.description.abstract	With continued technology scaling, process variations will be especially detrimental to six-transistor static memory structures (6T SRAMs). A memory architecture using three-transistor, one-diode DRAM (3T1D) cells in the L1 data cache tolerates wide process variations with little performance degradation, making it a promising choice for on-chip cache structures for next-generation microprocessors.
dc.description.abstract	Peer Reviewed

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